PART |
Description |
Maker |
2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor http://
|
UPA1716 UPA1716G PA1716 UPA1716G-E1 UPA1716G-E2 |
Pch enhancement type power MOS FET SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE MOS Field Effect Transistor
|
NEC[NEC]
|
2SJ540 |
Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
2SJ483 |
Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
2SJ541 |
Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
HAT2035R HAT2035R-EL-E |
0.5 A, 150 V, 5.5 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Silicon N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
UPA675T UPA675T-T1 UPA675T-T2 UPA675T-A |
100 mA, 16 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING N-channel enhancement type MOS FET
|
NEC
|
RJK03M3DPA-00-J5A RJK03M3DPA-15 |
30V, 40A, 3.9mΩmax.N Channel Power MOS FET 30V, 40A, 3.9mΩmax. N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
2SK2736 |
Silicon N Channel DVL MOS FET High Speed Power Switching Silicon N Channel DV-L MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
HAT1021R |
Silicon P Channel Power MOS FET(P沟道功率MOSFET) P通道功率MOS FET性(P沟道功率MOSFET的) Silicon P Channel Power MOS FET(P娌?????MOSFET)
|
Hitachi,Ltd.
|
RJK4013DPE09 RJK4013DPE-00-J3 RJK4013DPE-09 |
Silicon N Channel MOS FET High Speed Power Switching 17 A, 400 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET SC-83, LDPAK-3
|
Renesas Electronics Corporation Renesas Electronics, Corp.
|